5,10,15,20-Tetraphenylbisbenz[5,6]indeno[1,2,3-cd:1′,2′,3′-lm]perylene (DBP), also known as tetraphenyldibenzoperiflanthene, is a promising organic small-molecule semiconductor. It can be used as either an electron donor or acceptor for highly efficient photovoltaic and OLED applications. With perylene as an electron-rich core and extended conjugations, DBP can also be used in photovoltaic light-emitting diodes (PVOLEDs) devices as an electron-donating layer (EDL) material.
General Information CAS number 175606-05-0 Full name 5,10,15,20-Tetraphenylbisbenz[5,6]indeno[1,2,3-cd:1′,2′,3′-lm]perylene Chemical formula C64 H36 Molecular weight 804.97 g/mol Absorption* λmax 333 nm in THF Fluorescence λem 610 nm in THF HOMO/LUMO HOMO = 5.5 eV, LUMO = 3.5 eV [1] Synonyms Tetraphenyldibenzoperiflanthene, Dibenzo{[f,f′]-4,4′,7,7′-tetraphenyl}diindeno[1,2,3-cd:1′,2′,3′-lm]perylene, Red 2 Classification / Family Perylene derivatives, Hydrocarbons, Red dopant TADF materials, Phosphorescent organic light-emitting devices (PHOLEDs), Photovoltaics, Sublimed materials
* Measurable with an optical spectrometer , see our spectrometer application notes .
Product Details Purity Sublimed* >99.0% (HPLC) Melting point TGA: >350 °C (0.5% weight loss) Appearance Red powder/crystals
*Sublimation is a technique used to obtain ultra pure-grade chemicals. For more details about sublimation, please refer to the Sublimed Materials .
Chemical Structure Chemical Structure of 5,10,15,20-Tetraphenylbisbenz[5,6]indeno[1,2,3-cd:1′,2′,3′-lm]perylene (DBP). Device Structure(s) Device structure ITO/α-NPD (30 nm) /DPEPO (10 nm)/TPBi (40 nm)/1 wt% DBP: 10 wt% TTPA:mCP (8 nm)/mCP (2 nm)/DMACDPS (7.5 nm)/LiF (0.5 nm)/Al (100 nm) [1] Colour White Max. EQE 12.1% Max. Power Efficiency 22 Im/W
Device structure ITO/CFx /NPB (60 nm)/ Rubrene+ 1% DBP (40 nm)/DBzA (20 nm)/LiF (1 nm)/Al [2] Colour Red Current Efficiency@ 20 mA/cm2 5.4 cd/A EQE@ 20 mA/cm2 4.7% Power Efficiency@ 20 mA/cm2 5.3 Im/W
Device structure ITO (95 nm)/ HATCN (5 nm)/TAPC (20 nm)/CBP: 7 wt% NI-1-PhTPA (10 nm)/CBP (3 nm)/CBP: 3 wt% PXZDSO2 (5 nm)/CBP: 5 wt% PXZDSO2 : 0.3 wt% DBP (5 nm)/CBP: 3 wt% PXZDSO2 (5 nm)/CBP (3 nm)/CBP: 7 wt% NI-1-PhTPA (10 nm)/TmPyPB (55 nm)/LiF (1 nm)/Al (100 nm) [3] Colour White Max. Current Efficiency 51.4 cd/A Max. EQE 19.2% Max. Power Efficiency 47.5 Im/W
Device structure ITO (95 nm)/ HATCN (5 nm)/TAPC (20 nm)/ CBP: 10 wt% NI-1-PhTPA (10 nm)/CBP (3 nm)/CBP: 3 wt% PXZDSO2 (5 nm)/CBP: 5 wt% PXZDSO2 : 0.35 wt% DBP (5 nm)/ CBP: 3 wt% PXZDSO2 (5 nm)/CBP (3 nm)/CBP: 10 wt% NI-1-PhTPA (10 nm);/TmPyPB (55 nm)/LiF (1 nm)/Al (100 nm) [3] Colour White Max. Current Efficiency 42.2cd/A Max. EQE 17.3% Max. Power Efficiency 38.4 Im/W
Device structure ITO (95 nm)/PEDOT:PSS (40 nm)/2 wt% DBP :15 wt% DC-TC*:CBP (40 nm)/TmPyPB (50 nm)/LiF (1 nm)/Al (100 nm) [4] Colour Red Current Efficiency@ 100 mA/cm2 10.15 cd/A EQE@ 100 mA/cm2 6.65%
*For chemical structure information, please refer to the cited references.
更新时间:2024/4/1 15:43:56